@article{paulsen1992observation,
author = {Paulsen, Ron},
title = {Observation of near-interface oxide traps with the charge-pumping technique},
year = {1992},
month = {November},
abstract = {In studies of MOS devices with the charge pumping technique, the authors have encountered a low-frequency increase in the charge recombined per cycle, which they attribute to the charging and discharging of traps located within a tunneling distance of the Si-SiO/sub 2/ interface, i.e., near-interface oxide traps. MOS devices subjected to ionizing radiation as well as ultrathin tunnel oxide polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory devices possess a high density of near-interface oxide traps. When the charge recombined per cycle is examined as a function of frequency, a breakpoint is observed at a particular frequency with an inverse equivalent to a trap-to-trap tunneling time constant.},
url = {http://approjects.co.za/?big=en-us/research/publication/observation-of-near-interface-oxide-traps-with-the-charge-pumping-technique/},
pages = {627-629},
journal = {IEEE Electron Device Letters},
volume = {13},
number = {12},
}