@article{pauka2020repairing,
author = {Pauka, S. J. and Witt, J. D. S. and Allen, C. N. and Harlech-Jones, B. and Jouan, A. and Gardner, Geoff and Gronin, Sergei and Wang, T. and Thomas, C. and Manfra, Professor Michael J and Gukelberger, Jan and Gamble, John and Reilly, David and Cassidy, M. C.},
title = {Repairing the surface of InAs-based topological heterostructures},
year = {2020},
month = {September},
abstract = {Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin–orbit interaction and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped p-wave superconducting state often subjects them to fabrication-induced damage, limiting their mobility. Here, we examine scattering mechanisms in processed InAs 2DEG quantum wells and demonstrate a means of increasing their mobility via repairing the semiconductor–dielectric interface. Passivation of charged impurity states with an argon–hydrogen plasma results in a significant increase in the measured mobility and reduction in its variance relative to untreated samples, up to 45 300 cm 2/(V s) in a 10 nm deep quantum well.},
url = {http://approjects.co.za/?big=en-us/research/publication/repairing-the-surface-of-inas-based-topological-heterostructures/},
pages = {114301},
journal = {Journal of Applied Physics},
volume = {128},
number = {11},
}