The suitability of the LabVIEW system for a device research laboratory is evaluated. The system is applied successfully to the study of MOS device reliability with the highly repetitive measurement technique of charge pumping. Interface and near-interface oxide trap generation due to hot electron injection from a vertical field injection structure is characterized with the developed software. ><\/p>\n","protected":false},"excerpt":{"rendered":"
The suitability of the LabVIEW system for a device research laboratory is evaluated. The system is applied successfully to the study of MOS device reliability with the highly repetitive measurement technique of charge pumping. Interface and near-interface oxide trap generation due to hot electron injection from a vertical field injection structure is characterized with the 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